US 7,307,003

United States Patent	7,307,003
Reif , et al.	December 11, 2007

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Method of forming a multi-layer semiconductor structure incorporating a processing handle member

Abstract

A method of forming a multi-layer semiconductor structure includes attaching a handle-member to a top surface of a first structure using a first interface. At least one region of a bottom surface of the first structure is etched to form at least a first via-hole for exposing a portion of a first conductive member defined on the first structure. A conductive material is disposed in the first via-hole such that a first end of the conductive material is in electrical communication with the first conductive member and a second end of the conductive material is exposed at the bottom surface of the first structure. A second interface is disposed over at least the second end of the conductive material, which serves as a bonding and/or electrical interface between the first conductive member defined on the first structure and a second structure of the multi-layer semiconductor device structure.

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Inventors:	Reif; Rafael (Newton, MA), Chen; Kuan-Neng (Cambridge, MA), Tan; Chuan Seng (Cambridge, MA), Fan; Andy (Cambridge, MA)
Assignee:	Massachusetts Institute of Technology (Cambridge, MA)
Appl. No.:	10/749,103
Filed:	December 30, 2003